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1 Ergebnisse
1
Reliability under High Gate-Voltage Condition on SiC MOSFET..:
, In:
2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
,
Wada, Keiji
;
Sagae, Takahide
;
Hayashi, Shin-Ichiro
- p. 3280-3283 , 2024
Link:
https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567..
RT T1 <cTitle>2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)</cTitle>: T1 <Title>Reliability under High Gate-Voltage Condition on SiC MOSFET Through Repeated Overcurrent</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10567721&Exemplar=1&LAN=DE A1 Wada, Keiji A1 Sagae, Takahide A1 Hayashi, Shin-Ichiro YR 2024 K1 MOSFET K1 Fluctuations K1 Silicon carbide K1 Short-circuit currents K1 Circuits K1 Logic gates K1 Reliability engineering K1 SiC-MOSFET K1 Reliability K1 Over drive SP 3280 OP 3283 LK http://dx.doi.org/https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567721 DO https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567721 SF ELIB - SuUB Bremen
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