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1 Ergebnisse
1
Characterization and Failure Mechanism Study of Ohmic Gate ..:
, In:
2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
,
Jiang, Xi
;
Chen, Jing
;
Yuan, Song
... - p. 4516-4517 , 2024
Link:
https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567..
RT T1 <cTitle>2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)</cTitle>: T1 <Title>Characterization and Failure Mechanism Study of Ohmic Gate GaN HEMT under Overcurrent Stress</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10567800&Exemplar=1&LAN=DE A1 Jiang, Xi A1 Chen, Jing A1 Yuan, Song A1 Yan, Zhaoheng A1 Gong, Xiaowu A1 Pang, Zhenjiang A1 Wen, Lei A1 Bu, Xiaosong A1 Hong, Haimin YR 2024 K1 Performance evaluation K1 Rapid thermal processing K1 Failure analysis K1 Logic gates K1 HEMTs K1 Power electronics K1 Electric fields K1 ohmic gate P-GaN HEMTs K1 overcurrent capability K1 dynamic Ron SP 4516 OP 4517 LK http://dx.doi.org/https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567800 DO https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567800 SF ELIB - SuUB Bremen
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