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1 Ergebnisse
1
Comparative Study on Switching Oscillations of SiC MOSFETs ..:
, In:
2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
,
Yin, Qianchen
;
Li, Helong
;
Yang, Zhiqing
.. - p. 2665-2670 , 2024
Link:
https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10568..
RT T1
2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
: T1
Comparative Study on Switching Oscillations of SiC MOSFETs Using Transfer Function and State-Space Model
UL https://suche.suub.uni-bremen.de/peid=ieee-10568011&Exemplar=1&LAN=DE A1 Yin, Qianchen A1 Li, Helong A1 Yang, Zhiqing A1 Zhao, Shuang A1 Ding, Lijian YR 2024 K1 Semiconductor device modeling K1 MOSFET K1 Analytical models K1 Silicon carbide K1 Transfer functions K1 Switches K1 Stability analysis K1 Oscillations K1 SiC MOSFET K1 stability analysis SP 2665 OP 2670 LK http://dx.doi.org/https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10568011 DO https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10568011 SF ELIB - SuUB Bremen
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