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Ab Initio Calculations to Determine Tunneling Parameters fo..:
, In:
2024 47th MIPRO ICT and Electronics Convention (MIPRO)
,
Ley, Maximilian
;
Dick, Jan F.
;
Schulze, Jorg
- p. 1573-1578 , 2024
Link:
https://doi.org/10.1109/MIPRO60963.2024.10569785
RT T1 <cTitle>2024 47th MIPRO ICT and Electronics Convention (MIPRO)</cTitle>: T1 <Title>Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10569785&Exemplar=1&LAN=DE A1 Ley, Maximilian A1 Dick, Jan F. A1 Schulze, Jorg YR 2024 SN 2623-8764 K1 Semiconductor device modeling K1 Semiconductor device measurement K1 TFETs K1 Photonic band gap K1 Optical switches K1 Optical device fabrication K1 Phonons K1 Ab initio calculations K1 atomistic simulations K1 quantum tunneling K1 Zener tunneling K1 band-to-band tunneling K1 TFET K1 Tunneling Field-effect Transistor K1 4H-SiC SP 1573 OP 1578 LK http://dx.doi.org/https://doi.org/10.1109/MIPRO60963.2024.10569785 DO https://doi.org/10.1109/MIPRO60963.2024.10569785 SF ELIB - SuUB Bremen
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