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1 Ergebnisse
1
A 200V High-Speed Level Shifter for Monolithic GaN IC with ..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zheng, Yifei
;
Li, Boyu
;
Dong, Qianheng
... - p. 466-469 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579555
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>A 200V High-Speed Level Shifter for Monolithic GaN IC with Enhanced $\mathrm{d}V_\mathrm{S}/\text{dt}$ Noise Immunity and Negative $V_\mathrm{S}$ Tolerance</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579555&Exemplar=1&LAN=DE A1 Zheng, Yifei A1 Li, Boyu A1 Dong, Qianheng A1 Yuan, Weimin A1 Yang, Songtao A1 Zhu, Jing A1 Sun, Weifeng A1 Zhang, Long A1 Ma, Jie A1 Yu, SiYuan A1 Wang, Denggui A1 Zhou, Jianjun YR 2024 SN 1946-0201 K1 Semiconductor device measurement K1 Electric potential K1 Filters K1 Noise K1 Power semiconductor devices K1 Reliability K1 Gallium nitride K1 Gallium nitride (GaN) K1 Monolithic GaN power ICs K1 Level shifters K1 Noise immunity SP 466 OP 469 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579555 DO https://doi.org/10.1109/ISPSD59661.2024.10579555 SF ELIB - SuUB Bremen
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