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1 Ergebnisse
1
2.7 kVβ- Ga2O3 Heterojunction Barrier Schottky Diode with L..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Hao, Weibing
;
Xu, Guangwei
;
Wu, Feihong
... - p. 244-247 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579558
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>2.7 kVβ- Ga2O3 Heterojunction Barrier Schottky Diode with Low Leakage Current 2 Based upon RESURF Effect</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579558&Exemplar=1&LAN=DE A1 Hao, Weibing A1 Xu, Guangwei A1 Wu, Feihong A1 Han, Zhao A1 Li, Qiuyan A1 Zhou, Xuanze A1 Yang, Shu A1 Long, Shibing YR 2024 SN 1946-0201 K1 Structural rings K1 Resistance K1 Schottky diodes K1 Electric breakdown K1 Heterojunctions K1 Power semiconductor devices K1 Leakage currents K1 heterojunction barrier Schottky diode K1 leakage current K1 RESURF K1 high breakdown voltage SP 244 OP 247 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579558 DO https://doi.org/10.1109/ISPSD59661.2024.10579558 SF ELIB - SuUB Bremen
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