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1 Ergebnisse
1
Towards Vertical GaN-Power ICs: Co-integration of Lateral H..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Doring, P.
;
Basler, M.
;
Reiner, R.
... - p. 382-385 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579561
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579561&Exemplar=1&LAN=DE A1 Doring, P. A1 Basler, M. A1 Reiner, R. A1 Monch, S. A1 Driad, R. A1 Dammann, M. A1 Mikulla, M. A1 Quay, R. YR 2024 SN 1946-0201 K1 Integrated circuits K1 Layout K1 HEMTs K1 Logic gates K1 Benchmark testing K1 Power semiconductor devices K1 Transistors K1 gallium nitride K1 power integrated circuits K1 monolithic integrated circuits SP 382 OP 385 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579561 DO https://doi.org/10.1109/ISPSD59661.2024.10579561 SF ELIB - SuUB Bremen
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