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1 Ergebnisse
1
Design and Optimization of 3.3 kV Silicon Carbide Semi-Supe..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Melnyk, Kyrylo
;
Renz, Arne Benjamin
;
Cao, Qinze
... - p. 132-135 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579567
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Design and Optimization of 3.3 kV Silicon Carbide Semi-Superjunction Schottky Power Devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579567&Exemplar=1&LAN=DE A1 Melnyk, Kyrylo A1 Renz, Arne Benjamin A1 Cao, Qinze A1 Gammon, Peter Michael A1 Shah, Vishal Ajit A1 Lophitis, Neophytos A1 Rahimo, Munaf A1 Nistor, Iulian A1 Scognamillo, Ciro A1 Borghese, Alessandro A1 Maresca, Luca A1 Irace, Andrea A1 Antoniou, Marina YR 2024 SN 1946-0201 K1 Resistance K1 Schottky diodes K1 Silicon carbide K1 Voltage K1 High-voltage techniques K1 Electric vehicles K1 Power semiconductor devices K1 4H-SiC K1 Schottky Diode K1 Superjunction K1 Trench Termination K1 TCAD simulation SP 132 OP 135 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579567 DO https://doi.org/10.1109/ISPSD59661.2024.10579567 SF ELIB - SuUB Bremen
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