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1 Ergebnisse
1
900V Normally-OFF GaN-on-Si Transistors Achieved by Substra..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Li, Bruce
;
Shi, Carol
;
Dong, Brad
.. - p. 156-159 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579572
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>900V Normally-OFF GaN-on-Si Transistors Achieved by Substrate Potential Modulation (SPM)</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579572&Exemplar=1&LAN=DE A1 Li, Bruce A1 Shi, Carol A1 Dong, Brad A1 Yang, Simon A1 Tang, Gaofei YR 2024 SN 1946-0201 K1 Performance evaluation K1 Fabrication K1 Electric potential K1 Costs K1 Modulation K1 Quality of service K1 Silicon K1 900-V K1 GaN-on-Si K1 normally-OFF K1 reliability evaluation K1 substrate potential SP 156 OP 159 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579572 DO https://doi.org/10.1109/ISPSD59661.2024.10579572 SF ELIB - SuUB Bremen
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