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1 Ergebnisse
1
High-Performance GaN HEMTs on Single Crystalline AlN Templa..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Wang, Junbo
;
Li, Xiangdong
;
Chen, Long
... - p. 522-525 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579573
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579573&Exemplar=1&LAN=DE A1 Wang, Junbo A1 Li, Xiangdong A1 Chen, Long A1 Yuan, Ye A1 Lu, Tongxin A1 You, Shuzhen A1 Wang, Lezhi A1 Li, Zilan A1 Zhang, Jincheng A1 Wang, Xinqiang A1 Hao, Yue YR 2024 SN 1946-0201 K1 Performance evaluation K1 HEMTs K1 Logic gates K1 Threshold voltage K1 Power semiconductor devices K1 MODFETs K1 III-V semiconductor materials K1 GaN HEMTs K1 single crystalline AlN K1 ultra-thin buffer K1 Al2O3/SiO2 passivation SP 522 OP 525 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579573 DO https://doi.org/10.1109/ISPSD59661.2024.10579573 SF ELIB - SuUB Bremen
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