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Improving the Surge Current Capability of SiC MOSFETs Under..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Ohashi, Teruyuki
;
Kono, Hiroshi
;
Sakano, Tatsunori
.. - p. 172-175 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579578
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Improving the Surge Current Capability of SiC MOSFETs Under Positive Gate Bias</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579578&Exemplar=1&LAN=DE A1 Ohashi, Teruyuki A1 Kono, Hiroshi A1 Sakano, Tatsunori A1 Miyata, Rintaro A1 Iijima, Ryosuke YR 2024 SN 1946-0201 K1 Degradation K1 Resistance K1 MOSFET K1 Silicon carbide K1 Surge protection K1 Logic gates K1 Surges K1 SiC MOSFET K1 surge current SP 172 OP 175 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579578 DO https://doi.org/10.1109/ISPSD59661.2024.10579578 SF ELIB - SuUB Bremen
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