I agree that this site is using cookies. You can find further informations
here
.
X
Login
Merkliste (
0
)
Home
About us
Home About us
Our history
Profile
Press & public relations
Friends
The library in figures
Exhibitions
Projects
Training, internships, careers
Films
Services & Information
Home Services & Information
Lending and interlibrary loans
Returns and renewals
Training and library tours
My Account
Library cards
New to the library?
Download Information
Opening hours
Learning spaces
PC, WLAN, copy, scan and print
Catalogs and collections
Home Catalogs and Collections
Rare books and manuscripts
Digital collections
Subject Areas
Our sites
Home Our sites
Central Library
Law Library (Juridicum)
BB Business and Economics (BB11)
BB Physics and Electrical Engineering
TB Engineering and Social Sciences
TB Economics and Nautical Sciences
TB Music
TB Art & Design
TB Bremerhaven
Contact the library
Home Contact the library
Staff Directory
Open access & publishing
Home Open access & publishing
Reference management: Citavi & RefWorks
Publishing documents
Open Access in Bremen
zur Desktop-Version
Toggle navigation
Merkliste
1 Ergebnisse
1
Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradi..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zhou, Tianyang
;
Zhou, Feng
;
Chen, Quanyou
... - p. 526-529 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579580
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579580&Exemplar=1&LAN=DE A1 Zhou, Tianyang A1 Zhou, Feng A1 Chen, Quanyou A1 Lyu, Xiaofeng A1 Xu, Weizong A1 Zhou, Dong A1 Ren, Fangfang A1 Chen, Dunjun A1 Xia, Yuanyang A1 Wu, Leke A1 Wang, Ke A1 Li, Yiheng A1 Zhu, Tinggang A1 Zhang, Rong A1 Zheng, Youdou A1 Lu, Hai YR 2024 SN 1946-0201 K1 Radiation effects K1 Electric breakdown K1 Metals K1 Logic gates K1 HEMTs K1 Reliability engineering K1 Threshold voltage K1 p-GaN HEMT K1 buried-ohmic structure K1 gate breakdown K1 single-event burnout K1 irradiation SP 526 OP 529 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579580 DO https://doi.org/10.1109/ISPSD59661.2024.10579580 SF ELIB - SuUB Bremen
Export
RefWorks (nur Desktop-Version!)
Flow
(Zuerst in
Flow
einloggen, dann importieren)
