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1 Ergebnisse
1
Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradi..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zhou, Tianyang
;
Zhou, Feng
;
Chen, Quanyou
... - p. 526-529 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579580
RT T1
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness
UL https://suche.suub.uni-bremen.de/peid=ieee-10579580&Exemplar=1&LAN=DE A1 Zhou, Tianyang A1 Zhou, Feng A1 Chen, Quanyou A1 Lyu, Xiaofeng A1 Xu, Weizong A1 Zhou, Dong A1 Ren, Fangfang A1 Chen, Dunjun A1 Xia, Yuanyang A1 Wu, Leke A1 Wang, Ke A1 Li, Yiheng A1 Zhu, Tinggang A1 Zhang, Rong A1 Zheng, Youdou A1 Lu, Hai YR 2024 SN 1946-0201 K1 Radiation effects K1 Electric breakdown K1 Metals K1 Logic gates K1 HEMTs K1 Reliability engineering K1 Threshold voltage K1 p-GaN HEMT K1 buried-ohmic structure K1 gate breakdown K1 single-event burnout K1 irradiation SP 526 OP 529 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579580 DO https://doi.org/10.1109/ISPSD59661.2024.10579580 SF ELIB - SuUB Bremen
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