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1 Ergebnisse
1
Vertical Leakage and Back-Gating Characteristics of GaN HEM..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zheng, Zheyang
;
Liao, Hang
;
Feng, Sirui
... - p. 291-294 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579589
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Vertical Leakage and Back-Gating Characteristics of GaN HEMTs Based on GaN/AlN Epitaxy on Off-Axis Conducting 4H-SiC</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579589&Exemplar=1&LAN=DE A1 Zheng, Zheyang A1 Liao, Hang A1 Feng, Sirui A1 Yang, Yingchen A1 Geng, Yutao A1 Chen, Tao A1 Chen, Junting A1 Hua, Mengyuan A1 Chen, Kevin J. YR 2024 SN 1946-0201 K1 Silicon carbide K1 Doping K1 HEMTs K1 Charge carrier processes K1 Silicon K1 Epitaxial growth K1 Power semiconductor devices K1 GaN-on-SiC K1 hybrid power devices K1 vertical leakage K1 back-gating effects SP 291 OP 294 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579589 DO https://doi.org/10.1109/ISPSD59661.2024.10579589 SF ELIB - SuUB Bremen
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