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1 Ergebnisse
1
Investigation of Trap States and Reverse Leakage in Fully-V..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zhou, Feng
;
Qi, Wei
;
Ma, Teng
... - p. 311-314 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579592
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579592&Exemplar=1&LAN=DE A1 Zhou, Feng A1 Qi, Wei A1 Ma, Teng A1 Zou, Can A1 Qian, Junfan A1 Xu, Weizong A1 Wang, Yiwang A1 Zhou, Dong A1 Ren, Fangfang A1 Chen, Dunjun A1 Zhang, Rong A1 Zheng, Youdou A1 Lu, Hai YR 2024 SN 1946-0201 K1 Performance evaluation K1 Schottky diodes K1 Electron traps K1 Spectroscopy K1 Annealing K1 Semiconductor lasers K1 Schottky barriers K1 Laser lift-off K1 fully vertical GaN K1 deep-level transient spectroscopy K1 electron trap K1 leakage mechanism SP 311 OP 314 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579592 DO https://doi.org/10.1109/ISPSD59661.2024.10579592 SF ELIB - SuUB Bremen
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