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1 Ergebnisse
1
Layout Concern on Power Devices Based on 0.18μm 200V SOI-BC..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Ye, Ran
;
Bian, Jiaojing
;
Ma, Shulang
... - p. 446-449 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579596
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Layout Concern on Power Devices Based on 0.18μm 200V SOI-BCD Technology for Stable Electrical Characteristics and Reliability</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579596&Exemplar=1&LAN=DE A1 Ye, Ran A1 Bian, Jiaojing A1 Ma, Shulang A1 Liu, Siyang A1 Lu, Li A1 Xu, Penglong A1 Xu, Chaoqi A1 Lin, Feng A1 Wei, Jiaxing A1 Ma, Jie A1 Li, Sheng A1 Zhang, Long A1 Sun, Weifeng YR 2024 SN 1946-0201 K1 Layout K1 Voltage K1 High-voltage techniques K1 Power semiconductor devices K1 Reliability K1 Diffusion tensor imaging K1 SOI-BCD K1 Power Devices K1 LDMOS K1 LIGBT SP 446 OP 449 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579596 DO https://doi.org/10.1109/ISPSD59661.2024.10579596 SF ELIB - SuUB Bremen
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