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1 Ergebnisse
1
A Physics-Oriented Analysis of SiC Trench MOSFETs Under Gat..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Roig, Jaume
;
Krishna, Rishi
;
Jimenez-Guerra, Carlos
... - p. 100-103 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579599
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>A Physics-Oriented Analysis of SiC Trench MOSFETs Under Gate Switching Stress Test Conditions</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579599&Exemplar=1&LAN=DE A1 Roig, Jaume A1 Krishna, Rishi A1 Jimenez-Guerra, Carlos A1 Gomez, Alexis A. A1 Garcia-Mere, Juan R. A1 Rodriguez, Alberto A1 Rodriguez, Juan YR 2024 SN 1946-0201 K1 MOSFET K1 Solid modeling K1 Semiconductor device measurement K1 Three-dimensional displays K1 Silicon carbide K1 Statistical analysis K1 Switches K1 Reliability K1 Silicon Carbide K1 Gate Switching Stress K1 AC Bias Temperature Instability K1 Dynamic Gate Stress K1 TCAD SP 100 OP 103 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579599 DO https://doi.org/10.1109/ISPSD59661.2024.10579599 SF ELIB - SuUB Bremen
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