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1 Ergebnisse
1
Improved Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid ..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Ma, Yanfeng
;
Li, Sheng
;
Wang, Lixi
... - p. 1-4 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579604
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Improved Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579604&Exemplar=1&LAN=DE A1 Ma, Yanfeng A1 Li, Sheng A1 Wang, Lixi A1 Yang, Haoxiang A1 Lu, Weihao A1 Li, Mingfei A1 Ma, Jie A1 Ye, Ran A1 Wang, Denggui A1 Zhou, Jianjun A1 Wei, Jiaxing A1 Zhang, Long A1 Liu, Siyang A1 Sun, Weifeng YR 2024 SN 1946-0201 K1 Schottky diodes K1 Silicon carbide K1 Logic gates K1 HEMTs K1 Electrostatic discharges K1 Hybrid power systems K1 Threshold voltage K1 ESD K1 p-GaN HEMT K1 hybrid gate K1 TLP SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579604 DO https://doi.org/10.1109/ISPSD59661.2024.10579604 SF ELIB - SuUB Bremen
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