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1 Ergebnisse
1
High Performance Split-Gate-Trench MOS Based on Radiation-H..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Mo, Weiye
;
Ye, Jun
;
Liu, Haonan
... - p. 1-4 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579605
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>High Performance Split-Gate-Trench MOS Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579605&Exemplar=1&LAN=DE A1 Mo, Weiye A1 Ye, Jun A1 Liu, Haonan A1 Xiao, Xuan A1 Song, Yang A1 Huang, Wei A1 Wang, Tao A1 Zhang, Debin A1 Zhang, David. Wei YR 2024 SN 1946-0201 K1 Degradation K1 Radiation effects K1 MOSFET K1 Radiation hardening (electronics) K1 Capacitance-voltage characteristics K1 Split gate flash memory cells K1 Capacitance K1 Total-Ionizing-Dose effects K1 radiation hardening K1 SGT MOSFET SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579605 DO https://doi.org/10.1109/ISPSD59661.2024.10579605 SF ELIB - SuUB Bremen
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