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1 Ergebnisse
1
2kV SiC Floating Island SBD with N+ Buffer:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Wang, Ce
;
Wang, Hengyu
;
Que, Qianqian
... - p. 1-4 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579606
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>2kV SiC Floating Island SBD with N+ Buffer</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579606&Exemplar=1&LAN=DE A1 Wang, Ce A1 Wang, Hengyu A1 Que, Qianqian A1 Bai, Miaoguang A1 Wu, Yiding A1 Cheng, Haoyuan A1 Wan, Jiangbin A1 Li, Junze A1 Li, Yanjun A1 Zhang, Chi A1 Xu, Hongyi A1 Ren, Na A1 Guo, Qing A1 Sheng, Kuang YR 2024 SN 1946-0201 K1 Performance evaluation K1 Schottky diodes K1 Electric potential K1 Silicon carbide K1 Schottky barriers K1 Voltage K1 Color K1 Floating Island K1 turn-on recovery K1 dynamic performance K1 single pulse test SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579606 DO https://doi.org/10.1109/ISPSD59661.2024.10579606 SF ELIB - SuUB Bremen
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