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1 Ergebnisse
1
MOCVD Growth and Fabrication of Vertical P-i-N and Schottky..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Chen, Hang
;
Zhang, Shuhui
;
Yang, Tianpeng
... - p. 295-298 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579608
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>MOCVD Growth and Fabrication of Vertical P-i-N and Schottky Power Diodes Based on Ultra-wide Bandgap AlGaN Epitaxial Structures</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579608&Exemplar=1&LAN=DE A1 Chen, Hang A1 Zhang, Shuhui A1 Yang, Tianpeng A1 Mi, Tingting A1 Wang, Xiaowen A1 Liu, Chao YR 2024 SN 1946-0201 K1 Schottky diodes K1 PIN photodiodes K1 Transmission electron microscopy K1 Wide band gap semiconductors K1 P-i-n diodes K1 MOCVD K1 Electric fields K1 ultra-wide bandgap K1 AlGaN K1 rectifiers K1 breakdown voltage K1 high-AI-composition K1 average electric field SP 295 OP 298 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579608 DO https://doi.org/10.1109/ISPSD59661.2024.10579608 SF ELIB - SuUB Bremen
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