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1 Ergebnisse
1
Experimental and Theoretical Study on failure mechanism of ..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zhou, Tong
;
Ren, Min
;
Ren, Min
... - p. 554-557 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579610
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Experimental and Theoretical Study on failure mechanism of Superjunction MOSFET under H3TRB Testing</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579610&Exemplar=1&LAN=DE A1 Zhou, Tong A1 Ren, Min A1 Ren, Min A1 Zhang, Xin A1 Liang, Siqi A1 Zhou, Jianyu A1 Zheng, Fang A1 Ma, Rongyao A1 Pi, Meng A1 Li, Zehong A1 Guo, Xinkai A1 Zhang, Bo YR 2024 SN 1946-0201 K1 Semiconductor device modeling K1 MOSFET K1 Analytical models K1 Surface resistance K1 Moisture K1 Failure analysis K1 Humidity K1 H3TRB-HVDC K1 Superjunction K1 reliability K1 failure model SP 554 OP 557 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579610 DO https://doi.org/10.1109/ISPSD59661.2024.10579610 SF ELIB - SuUB Bremen
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