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1 Ergebnisse
1
Individual Control of Paralleled SiC-MOSFETs with Nano-Seco..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Takagi, Naoki
;
Endoh, Tetuso
;
Takahashi, Yoshikazu
.. - p. 188-191 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579615
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Individual Control of Paralleled SiC-MOSFETs with Nano-Second Level Switching Timing Synchronization</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579615&Exemplar=1&LAN=DE A1 Takagi, Naoki A1 Endoh, Tetuso A1 Takahashi, Yoshikazu A1 Takako, Yasuhiro A1 Hanyu, Takahiro YR 2024 SN 1946-0201 K1 Degradation K1 Thermal resistance K1 Switches K1 Logic gates K1 Wind power generation K1 Control systems K1 Synchronization K1 SiC-MOSFET K1 FPGA K1 Gate driver K1 current balancing K1 switching timing synchronization SP 188 OP 191 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579615 DO https://doi.org/10.1109/ISPSD59661.2024.10579615 SF ELIB - SuUB Bremen
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