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1 Ergebnisse
1
Experiments of A Novel 600V SOI-LIGBT with Parallelly Discr..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
He, Nailong
;
Liu, Teng
;
Wu, Qiyi
... - p. 434-437 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579616
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Experiments of A Novel 600V SOI-LIGBT with Parallelly Discrete Cells for Amperage-Class Current Integration</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579616&Exemplar=1&LAN=DE A1 He, Nailong A1 Liu, Teng A1 Wu, Qiyi A1 Song, Hua A1 Mu, Jiangnan A1 Zhang, Sen A1 Zhang, Long A1 Liu, Siyang A1 Sun, Weifeng YR 2024 SN 1946-0201 K1 Structural rings K1 Insulated gate bipolar transistors K1 Silicon-on-insulator K1 Modulation K1 High-voltage techniques K1 Power semiconductor devices K1 Electric fields K1 SOI-LIGBT K1 High-voltage interconnect HVI K1 Breakdown voltage VB K1 Safe operating area SOA K1 High current capability SP 434 OP 437 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579616 DO https://doi.org/10.1109/ISPSD59661.2024.10579616 SF ELIB - SuUB Bremen
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