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1 Ergebnisse
1
Kilovolt, Low-Barrier Ga2O3 JBS diode with Ultra-Low Forwar..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Gong, Hehe
;
Sun, Na
;
Hu, Tiancheng
... - p. 104-107 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579626
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Kilovolt, Low-Barrier Ga2O3 JBS diode with Ultra-Low Forward Voltage</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579626&Exemplar=1&LAN=DE A1 Gong, Hehe A1 Sun, Na A1 Hu, Tiancheng A1 Porter, Matthew A1 Yu, Xinxin A1 Ren, Fangfang A1 Gu, Shulin A1 Zheng, Youdou A1 Zhang, Rong A1 Zhang, Yuhao A1 Ye, Jiandong YR 2024 SN 1946-0201 K1 Performance evaluation K1 Schottky diodes K1 Technological innovation K1 Silicon carbide K1 Photonic band gap K1 Schottky barriers K1 Rectifiers K1 β-Ga2O3 K1 TiN K1 junction barrier Schottky diode K1 ultra-low turn-on voltage K1 power loss SP 104 OP 107 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579626 DO https://doi.org/10.1109/ISPSD59661.2024.10579626 SF ELIB - SuUB Bremen
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