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Reducing Reverse Recovery Charge in Trench Power MOSFETs Us..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Khaderbad, Mrunal A. ; Houadef, Ali ; Rogers, Chris... - p. 410-413 , 2024

Link: https://doi.org/10.1109/ISPSD59661.2024.10579630

RT 
T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Reducing Reverse Recovery Charge in Trench Power MOSFETs Using Platinum Traps Introduced by Implantation and PVD</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10579630&Exemplar=1&LAN=DE
				
A1 Khaderbad, Mrunal A.
A1 Houadef, Ali
A1 Rogers, Chris
A1 Cousins, Ian
A1 Waghmare, Parag
A1 Pandey, Deepak
A1 Hsu, Wesley Chih-Wei
A1 Amanullah, Mohammad
A1 Efthymiou, Epameinondas
A1 Ould-Ahmed, Sami
A1 Bottcher, Tim
A1 Klingbeil, Matthias
YR 2024
SN 1946-0201
K1 MOSFET
K1 Ion implantation
K1 Costs
K1 Platinum
K1 Bills of materials
K1 Switches
K1 Physical vapor deposition
K1 reverse recovery charge
K1 trench power MOSFET
K1 RESURF
K1 lifetime killing
K1 Spiking
K1 Efficiency
K1 Split gate MOSFET
K1 Field plate MOSFET
K1 drift region
K1 body diode
K1 Buck converter
SP 410
OP 413
LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579630
DO https://doi.org/10.1109/ISPSD59661.2024.10579630
SF ELIB - SuUB Bremen

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