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1 Ergebnisse
1
Reducing Reverse Recovery Charge in Trench Power MOSFETs Us..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Khaderbad, Mrunal A.
;
Houadef, Ali
;
Rogers, Chris
... - p. 410-413 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579630
RT T1
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Reducing Reverse Recovery Charge in Trench Power MOSFETs Using Platinum Traps Introduced by Implantation and PVD
UL https://suche.suub.uni-bremen.de/peid=ieee-10579630&Exemplar=1&LAN=DE A1 Khaderbad, Mrunal A. A1 Houadef, Ali A1 Rogers, Chris A1 Cousins, Ian A1 Waghmare, Parag A1 Pandey, Deepak A1 Hsu, Wesley Chih-Wei A1 Amanullah, Mohammad A1 Efthymiou, Epameinondas A1 Ould-Ahmed, Sami A1 Bottcher, Tim A1 Klingbeil, Matthias YR 2024 SN 1946-0201 K1 MOSFET K1 Ion implantation K1 Costs K1 Platinum K1 Bills of materials K1 Switches K1 Physical vapor deposition K1 reverse recovery charge K1 trench power MOSFET K1 RESURF K1 lifetime killing K1 Spiking K1 Efficiency K1 Split gate MOSFET K1 Field plate MOSFET K1 drift region K1 body diode K1 Buck converter SP 410 OP 413 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579630 DO https://doi.org/10.1109/ISPSD59661.2024.10579630 SF ELIB - SuUB Bremen
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