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1 Ergebnisse
1
Investigation of Total Ionizing Dose Radiation Effects on S..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Luo, Maojiu
;
Zhang, Yourun
;
Chen, Hang
. - p. 96-99 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579634
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Investigation of Total Ionizing Dose Radiation Effects on SiC MOSFETs by Modulating the Nitrogen Content in Gate Oxide Processing</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579634&Exemplar=1&LAN=DE A1 Luo, Maojiu A1 Zhang, Yourun A1 Chen, Hang A1 Zhang, Bo YR 2024 SN 1946-0201 K1 Performance evaluation K1 Radiation effects K1 Annealing K1 Sensitivity K1 Silicon carbide K1 MOS capacitors K1 Logic gates K1 SiC MOSFET K1 Total Ionizing Dose Radiation K1 NO annealing K1 oxide trapped charges K1 gate oxide lifetime SP 96 OP 99 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579634 DO https://doi.org/10.1109/ISPSD59661.2024.10579634 SF ELIB - SuUB Bremen
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