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1 Ergebnisse
1
3.3 kV-Class 4H-SiC Epi-Refilled Super-Junction Diode with ..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Cheng, Haoyuan
;
Wang, Hengyu
;
Zhang, Chi
... - p. 13-16 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579635
RT T1
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
3.3 kV-Class 4H-SiC Epi-Refilled Super-Junction Diode with Repetitive Surge Current Robustness
UL https://suche.suub.uni-bremen.de/peid=ieee-10579635&Exemplar=1&LAN=DE A1 Cheng, Haoyuan A1 Wang, Hengyu A1 Zhang, Chi A1 Wang, Ce A1 Wan, Jiangbin A1 Han, Jingrui A1 Ting, Hungkit A1 Que, Qianqian A1 Li, Yanjun A1 Bai, Miaoguang A1 Wu, Yiding A1 Sheng, Kuang YR 2024 SN 1946-0201 K1 Performance evaluation K1 Schottky diodes K1 Silicon carbide K1 Schottky barriers K1 Switches K1 Robustness K1 Etching K1 Super-junction K1 trench-refilling K1 hexagonal cell K1 surge robustness SP 13 OP 16 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579635 DO https://doi.org/10.1109/ISPSD59661.2024.10579635 SF ELIB - SuUB Bremen
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