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1
Reliability and Failure Mechanisms of Direct Bonded Power S..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Kohler, Marius
;
Curkin, Michael
;
Thomas, Christian
... - p. 506-509 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579636
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Reliability and Failure Mechanisms of Direct Bonded Power Semiconductor Devices in Power Cycling Test</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579636&Exemplar=1&LAN=DE A1 Kohler, Marius A1 Curkin, Michael A1 Thomas, Christian A1 Heuck, Nicolas A1 Muller, Jens A1 Besendorfer, Kurt-Georg YR 2024 SN 1946-0201 K1 Insulated gate bipolar transistors K1 Degradation K1 Metallization K1 Failure analysis K1 Power semiconductor devices K1 Reliability K1 Copper K1 direct bonding K1 die attach K1 reliability K1 power cycling K1 failure analysis K1 sintering SP 506 OP 509 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579636 DO https://doi.org/10.1109/ISPSD59661.2024.10579636 SF ELIB - SuUB Bremen
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