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1 Ergebnisse
1
Fabrication and Optimization of a High-Reliability 700 V Su..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Yao, Guoliang
;
Qiao, Ming
;
Shi, Zesheng
.. - p. 48-51 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579639
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Fabrication and Optimization of a High-Reliability 700 V Super-Junction MOSFET with Segmented P-Buried RESURF Termination</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579639&Exemplar=1&LAN=DE A1 Yao, Guoliang A1 Qiao, Ming A1 Shi, Zesheng A1 Li, Jue A1 Zhang, Bo YR 2024 SN 1946-0201 K1 Fabrication K1 MOSFET K1 Power semiconductor devices K1 Reliability K1 Electric fields K1 Optimization K1 super-junction K1 reliability K1 charge-imbalance K1 termination region SP 48 OP 51 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579639 DO https://doi.org/10.1109/ISPSD59661.2024.10579639 SF ELIB - SuUB Bremen
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