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1 Ergebnisse
1
Short-Circuit Characteristics of Asymmetry Trench (AT) MOSF..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Ding, Xiaofeng
;
Peng, Lyuzhang
;
Zhao, Yujia
... - p. 216-219 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579642
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Short-Circuit Characteristics of Asymmetry Trench (AT) MOSFET and Associative Failure Mechanisms over Wide Ambient Temperature</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579642&Exemplar=1&LAN=DE A1 Ding, Xiaofeng A1 Peng, Lyuzhang A1 Zhao, Yujia A1 Yang, Kun A1 Cui, Huifeng A1 Shan, Zhenyu A1 Yang, Yanyong A1 Lyu, Gang YR 2024 SN 1946-0201 K1 Temperature measurement K1 MOSFET K1 Temperature distribution K1 Silicon carbide K1 Failure analysis K1 Logic gates K1 Silicon K1 SiC MOSFET K1 Asymmetry Trench K1 Short circuit failure SP 216 OP 219 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579642 DO https://doi.org/10.1109/ISPSD59661.2024.10579642 SF ELIB - SuUB Bremen
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