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1 Ergebnisse
1
The Investigation on Diode Surge Current Capability of Reve..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zou, Yang
;
Wang, Hengyu
;
Guo, Qing
... - p. 68-71 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579643
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>The Investigation on Diode Surge Current Capability of Reverse Conducting IGBT and The Impact of Gate Bias</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579643&Exemplar=1&LAN=DE A1 Zou, Yang A1 Wang, Hengyu A1 Guo, Qing A1 Li, Ying A1 Tan, Lingqi A1 Ma, Kai A1 Wang, Ce A1 Wu, Jiupeng A1 Sheng, Kuang YR 2024 SN 1946-0201 K1 Heating systems K1 Temperature distribution K1 Metals K1 Lattices K1 Voltage K1 Logic gates K1 Current distribution K1 RC-IGBT K1 MOS diode K1 monolithically integrated diode K1 surge current test K1 gate bias SP 68 OP 71 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579643 DO https://doi.org/10.1109/ISPSD59661.2024.10579643 SF ELIB - SuUB Bremen
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