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1 Ergebnisse
1
In-Situ Extraction of Time-Resolved $E_{\text{OSS}}$ on GaN..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Huang, Yifei
;
Jiang, Qimeng
;
Huang, Sen
... - p. 259-262 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579648
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>In-Situ Extraction of Time-Resolved $E_{\text{OSS}}$ on GaN Power Device Based on a Modified Hard Switching Platform</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579648&Exemplar=1&LAN=DE A1 Huang, Yifei A1 Jiang, Qimeng A1 Huang, Sen A1 Yin, Yulian A1 Tang, Xi A1 Wang, Xinhua A1 Liu, Xinyu YR 2024 SN 1946-0201 K1 Low voltage K1 Switching loss K1 Voltage K1 Switches K1 Market research K1 Topology K1 Power semiconductor devices K1 GaN power device K1 dynamic $E_{OSS}$ K1 hard-switching K1 dynamic $R_{ON}$ K1 FOM SP 259 OP 262 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579648 DO https://doi.org/10.1109/ISPSD59661.2024.10579648 SF ELIB - SuUB Bremen
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