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1
Evidence of Dynamic Input Capacitance of SiC Power MOSFETs:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Nagel, Michel
;
Race, Salvatore
;
Brandl, Anja
.. - p. 128-131 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579649
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Evidence of Dynamic Input Capacitance of SiC Power MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579649&Exemplar=1&LAN=DE A1 Nagel, Michel A1 Race, Salvatore A1 Brandl, Anja A1 Kovacevic-Badstuebner, Ivana A1 Grossner, Ulrike YR 2024 SN 1946-0201 K1 MOSFET K1 Semiconductor device measurement K1 Power measurement K1 Impedance measurement K1 Silicon carbide K1 Capacitance-voltage characteristics K1 Capacitance K1 dynamic input capacitance K1 SiC power MOS-FETs K1 Cgg K1 interface traps SP 128 OP 131 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579649 DO https://doi.org/10.1109/ISPSD59661.2024.10579649 SF ELIB - SuUB Bremen
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