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1 Ergebnisse
1
Vertical GaN Superjunction Diode on Sapphire with Kilovolt ..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Porter, Matthew A.
;
Ma, Yunwei
;
Qin, Yuan
... - p. 331-334 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579650
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579650&Exemplar=1&LAN=DE A1 Porter, Matthew A. A1 Ma, Yunwei A1 Qin, Yuan A1 Srijanto, Bernadeta A1 Briggs, Dayrl A1 Kravchenko, Ivan A1 Zhang, Yuhao YR 2024 SN 1946-0201 K1 Performance evaluation K1 Breakdown voltage K1 Costs K1 Electric breakdown K1 Photonic band gap K1 Semiconductor diodes K1 Power semiconductor devices K1 GaN K1 Superjunction K1 Quasi-vertical K1 NiO K1 dynamic breakdown SP 331 OP 334 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579650 DO https://doi.org/10.1109/ISPSD59661.2024.10579650 SF ELIB - SuUB Bremen
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