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1 Ergebnisse
1
600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MO..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Jang, Seung Yup
;
Mancini, Stephen A.
;
Sung, Woongje
- p. 335-338 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579651
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MOSFET (L-BiD-JBSFET)</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579651&Exemplar=1&LAN=DE A1 Jang, Seung Yup A1 Mancini, Stephen A. A1 Sung, Woongje YR 2024 SN 1946-0201 K1 Schottky diodes K1 MOSFET K1 Silicon carbide K1 Buildings K1 Bidirectional control K1 Electric variables K1 Power semiconductor devices K1 4H-SiC K1 bidirectional K1 common-drain K1 lateral K1 600V K1 Schottky K1 JBSFET SP 335 OP 338 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579651 DO https://doi.org/10.1109/ISPSD59661.2024.10579651 SF ELIB - SuUB Bremen
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