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1 Ergebnisse
1
Trade-Off Between TID and SEGR Effects Based on High-Voltag..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Li, Yanfei
;
Qiao, Ming
;
Xie, Rubin
.. - p. 442-445 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579653
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Trade-Off Between TID and SEGR Effects Based on High-Voltage Radiation-Hardened Gate Oxide</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579653&Exemplar=1&LAN=DE A1 Li, Yanfei A1 Qiao, Ming A1 Xie, Rubin A1 Hong, Genshen A1 Zhang, Bo YR 2024 SN 1946-0201 K1 MOSFET K1 Radiation hardening (electronics) K1 Layout K1 High-voltage techniques K1 Logic gates K1 Threshold voltage K1 Power semiconductor devices K1 total ionizing dose K1 single-event gate rupture K1 radiation-hardened gate oxide K1 threshold voltage shift SP 442 OP 445 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579653 DO https://doi.org/10.1109/ISPSD59661.2024.10579653 SF ELIB - SuUB Bremen
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