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1 Ergebnisse
1
A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Tra..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Yang, Yingchen
;
Feng, Sirui
;
Zhou, Zongjie
... - p. 343-346 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579661
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Transistor</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579661&Exemplar=1&LAN=DE A1 Yang, Yingchen A1 Feng, Sirui A1 Zhou, Zongjie A1 Chen, Tao A1 Wu, Zheng A1 Du, Yangming A1 Ng, Yat Hon A1 Liao, Hang A1 Huang, Yumeng A1 Wang, Heng A1 Zheng, Zheyang A1 Chen, Kevin J. YR 2024 SN 1946-0201 K1 Silicon carbide K1 Bidirectional control K1 Switches K1 Logic gates K1 HEMTs K1 Choppers (circuits) K1 JFETs K1 GaN/SiC K1 hybrid field-effect transistors (HyFETs) K1 monolithic integration K1 bi-directional SP 343 OP 346 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579661 DO https://doi.org/10.1109/ISPSD59661.2024.10579661 SF ELIB - SuUB Bremen
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