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1 Ergebnisse
1
Design and Fabrication of Low-Leakage Vertical GaN TMBS Rec..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Li, Yanjun
;
Ren, Na
;
Wang, Hengyu
... - p. 1-4 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579662
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Design and Fabrication of Low-Leakage Vertical GaN TMBS Rectifier with Low Forward Voltage Drop</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579662&Exemplar=1&LAN=DE A1 Li, Yanjun A1 Ren, Na A1 Wang, Hengyu A1 Guo, Qing A1 Wang, Ce A1 Cheng, Haoyuan A1 Kong, Lingxu A1 Sheng, Kuang YR 2024 SN 1946-0201 K1 Performance evaluation K1 Fabrication K1 Schottky diodes K1 Electric potential K1 Schottky barriers K1 Rectifiers K1 Insulators K1 GaN K1 trench MIS barrier Schottky rectifier K1 self-aligned insulator opening K1 leakage current K1 forward voltage drop SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579662 DO https://doi.org/10.1109/ISPSD59661.2024.10579662 SF ELIB - SuUB Bremen
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