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1 Ergebnisse
1
Degradation Behavior of SiC Trench MOSFETs by Total-Ionizin..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Chen, Zhengjia
;
Xu, Hongyi
;
He, Yufu
... - p. 228-231 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579668
RT T1
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Degradation Behavior of SiC Trench MOSFETs by Total-Ionizing-dose Irradiation Under Gate Voltage Stress
UL https://suche.suub.uni-bremen.de/peid=ieee-10579668&Exemplar=1&LAN=DE A1 Chen, Zhengjia A1 Xu, Hongyi A1 He, Yufu A1 Ji, Manyi A1 Zhu, Zhengyu A1 Hu, Zhijian A1 Wan, Xin A1 Ren, Na A1 Sheng, Kuang YR 2024 SN 1946-0201 K1 Resistance K1 Degradation K1 MOSFET K1 Radiation effects K1 Silicon carbide K1 Logic gates K1 Threshold voltage K1 SiC Trench MOSFETs K1 Total-Ionizing-Des K1 Gate damage SP 228 OP 231 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579668 DO https://doi.org/10.1109/ISPSD59661.2024.10579668 SF ELIB - SuUB Bremen
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