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1 Ergebnisse
1
Experimental Comparative Demonstrations and Analysis of 3.3..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
He, Z.
;
Torky, M.
;
Ghandi, R.
... - p. 140-143 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579670
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Experimental Comparative Demonstrations and Analysis of 3.3kV 4H-SiC Common-Drain and Common-Source Bidirectional Charge-Balanced Power DMOSFETs Switching</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579670&Exemplar=1&LAN=DE A1 He, Z. A1 Torky, M. A1 Ghandi, R. A1 Hitchcock, C. W. A1 Kennerly, S. A1 Chow, T. P. YR 2024 SN 1946-0201 K1 Semiconductor device modeling K1 Performance evaluation K1 Switches K1 Voltage K1 Logic gates K1 Market research K1 Hybrid power systems K1 4H-SiC K1 high voltage power DMOSFET K1 Bidirectional K1 Charge-balanced SP 140 OP 143 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579670 DO https://doi.org/10.1109/ISPSD59661.2024.10579670 SF ELIB - SuUB Bremen
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