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Substantial Improvement of the Short-circuit Capability of ..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Boccarossa, M.
;
Maresca, L.
;
Borghese, A.
... - p. 88-91 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579678
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Substantial Improvement of the Short-circuit Capability of a 1.2 kV SiC MOSFET by a HfO2/SiO2 Ferroelectric Gate Stack</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579678&Exemplar=1&LAN=DE A1 Boccarossa, M. A1 Maresca, L. A1 Borghese, A. A1 Riccio, M. A1 Breglio, G. A1 Irace, A. A1 Salvatore, G. A. YR 2024 SN 1946-0201 K1 MOSFET K1 Temperature dependence K1 Temperature K1 Silicon carbide K1 Tail K1 Logic gates K1 Silicon K1 Silicon carbide power MOSFET K1 TCAD simulations K1 ferroelectric materials K1 hafnium oxide K1 short-circuit test SP 88 OP 91 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579678 DO https://doi.org/10.1109/ISPSD59661.2024.10579678 SF ELIB - SuUB Bremen
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