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1 Ergebnisse
1
200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Huang, Zhen-Hong
;
Chang, Chia-Hao
;
Lo, Ting-Chun
... - p. 319-322 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579679
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579679&Exemplar=1&LAN=DE A1 Huang, Zhen-Hong A1 Chang, Chia-Hao A1 Lo, Ting-Chun A1 Lee, Yu-Ting A1 Lu, Chih-Hung A1 Wang, Hung-En A1 Tsai, Yi-He A1 Cheng, Ying-Chi A1 Huang, Yu-Jen A1 Chou, Chin-Wen A1 Wu, Tian-Li YR 2024 SN 1946-0201 K1 Performance evaluation K1 Semiconductor device reliability K1 Logic gates K1 HEMTs K1 Tunneling K1 Stability analysis K1 Epitaxial growth K1 p-GaN HEMT K1 p-AlN K1 Electroluminescence K1 TDGB K1 HTRB SP 319 OP 322 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579679 DO https://doi.org/10.1109/ISPSD59661.2024.10579679 SF ELIB - SuUB Bremen
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