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1 Ergebnisse
1
Analysis of Leakage Mechanism in Irradiated 4H-SiC INV and ..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Gu, Yong
;
Ma, Jie
;
Wen, Hongyang
... - p. 116-119 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579680
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Analysis of Leakage Mechanism in Irradiated 4H-SiC INV and NOR Logic Gate Circuits</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579680&Exemplar=1&LAN=DE A1 Gu, Yong A1 Ma, Jie A1 Wen, Hongyang A1 Zheng, Guiqiang A1 Pan, Chengwu A1 Hou, Xiangyu A1 Hong, Jingjing A1 Liu, Ao A1 Huang, Runhua A1 Bai, Song A1 Zhang, Long A1 Liu, Siyang A1 Sun, Weifeng YR 2024 SN 1946-0201 K1 Performance evaluation K1 Radiation effects K1 Circuits K1 Layout K1 Metals K1 Logic gates K1 Power semiconductor devices K1 SiC K1 CMOS K1 Irradiation K1 Logic Circuit K1 Leakage current K1 Total Ionizing Dose (TID) SP 116 OP 119 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579680 DO https://doi.org/10.1109/ISPSD59661.2024.10579680 SF ELIB - SuUB Bremen
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