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1 Ergebnisse
1
Comprehensive Study on Trapping-Induced Dynamics in β-Ga2O3..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Wang, Haoran
;
Lai, Chun-Hao
;
Huang, Po-Yen
... - p. 224-227 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579683
RT T1
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Comprehensive Study on Trapping-Induced Dynamics in β-Ga2O3Schottky Barrier Diodes Under Continuous Switching Stress
UL https://suche.suub.uni-bremen.de/peid=ieee-10579683&Exemplar=1&LAN=DE A1 Wang, Haoran A1 Lai, Chun-Hao A1 Huang, Po-Yen A1 Lin, Yuan-An A1 Hsu, Shawn S.H. A1 Wong, Roy K.-Y. YR 2024 SN 1946-0201 K1 Performance evaluation K1 Schottky diodes K1 Schottky barriers K1 Switches K1 Voltage K1 Energy states K1 Power semiconductor devices K1 β-Ga2O3 K1 SBD K1 Continuous Switching K1 Stability K1 Active energy K1 Trapping SP 224 OP 227 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579683 DO https://doi.org/10.1109/ISPSD59661.2024.10579683 SF ELIB - SuUB Bremen
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