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1 Ergebnisse
1
Bi-Directional Operation and Active Err Reduction of 2nd Ge..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Saraya, T.
;
Fukui, M.
;
Kobayashi, Y.
... - p. 546-549 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579686
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Bi-Directional Operation and Active Err Reduction of 2nd Generation Back-Gate-Controlled IGBTs (BC-IGBTs)</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579686&Exemplar=1&LAN=DE A1 Saraya, T. A1 Fukui, M. A1 Kobayashi, Y. A1 Itou, K. A1 Takakura, T. A1 Suzuki, S. A1 Gejo, R. A1 Sakano, T. A1 Inokuchi, T. A1 Matsudai, T. A1 Takao, K. A1 Hiramoto, T. YR 2024 SN 1946-0201 K1 Insulated gate bipolar transistors K1 Semiconductor device measurement K1 Pulse measurements K1 Bidirectional control K1 Switches K1 Logic gates K1 Loss measurement K1 IGBT K1 BC-IGBT K1 RC-IGBT K1 Double Gate K1 Back Gate K1 Bi-directional K1 Diode less K1 Active reduction K1 Reverse recovery loss K1 Snapback free SP 546 OP 549 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579686 DO https://doi.org/10.1109/ISPSD59661.2024.10579686 SF ELIB - SuUB Bremen
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