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1 Ergebnisse
1
A Discrete Channel Model to Estimate Threshold Voltage Devi..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Li, Junze
;
Guo, Qing
;
Liu, Li
... - p. 120-123 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579687
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>A Discrete Channel Model to Estimate Threshold Voltage Deviation Induced by The Voltage Stress in SiC Short Channel MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579687&Exemplar=1&LAN=DE A1 Li, Junze A1 Guo, Qing A1 Liu, Li A1 Wang, Ce A1 Hu, Zijian A1 Xu, Hongyi A1 Li, Yanjun A1 Wang, Hengyu A1 Ren, Na A1 Sheng, Kuang YR 2024 SN 1946-0201 K1 Semiconductor device modeling K1 Resistance K1 Silicon carbide K1 Channel estimation K1 Logic gates K1 Threshold voltage K1 Interface states K1 interface states K1 short channel effects K1 threshold voltage SP 120 OP 123 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579687 DO https://doi.org/10.1109/ISPSD59661.2024.10579687 SF ELIB - SuUB Bremen
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