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1 Ergebnisse
1
2kV Low Leakage Vertical NiO/β-Ga2O3 Hetero-Junction Diode ..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Wan, Jiangbin
;
Wang, Hengyu
;
Cheng, Haoyuan
... - p. 200-203 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579688
RT T1
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
2kV Low Leakage Vertical NiO/β-Ga2O3 Hetero-Junction Diode and its Thermal/Electrical Stability
UL https://suche.suub.uni-bremen.de/peid=ieee-10579688&Exemplar=1&LAN=DE A1 Wan, Jiangbin A1 Wang, Hengyu A1 Cheng, Haoyuan A1 Wang, Ce A1 Que, Qianqian A1 Li, Yanjun A1 Zhang, Chi A1 Sun, Jiabao A1 Liu, Dong A1 Sheng, Kuang YR 2024 SN 1946-0201 K1 Stability analysis K1 Dielectrics K1 Semiconductor process modeling K1 Semiconductor diodes K1 Leakage currents K1 Electric fields K1 Anodes K1 Power electronics application K1 ultra-wide bandgap semiconductor K1 gallium oxide K1 nickel oxide K1 deep trench K1 deep mesa K1 termination SP 200 OP 203 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579688 DO https://doi.org/10.1109/ISPSD59661.2024.10579688 SF ELIB - SuUB Bremen
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