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1 Ergebnisse
1
Global Potential Control Technique Used in Isolation Struct..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Pan, Chengwu
;
Ma, Jie
;
Li, Haoyu
... - p. 406-409 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579689
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Global Potential Control Technique Used in Isolation Structure for 1200V HVICs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579689&Exemplar=1&LAN=DE A1 Pan, Chengwu A1 Ma, Jie A1 Li, Haoyu A1 He, Nailong A1 Wei, Jiaxing A1 Li, Sheng A1 Liu, Siyang A1 Zhang, Sen A1 Zeng, Dajie A1 Zhang, Long A1 Sun, Weifeng YR 2024 SN 1946-0201 K1 Integrated circuits K1 Economics K1 Electric potential K1 High-voltage techniques K1 Doping K1 Power semiconductor devices K1 Voltage control K1 1200V K1 high voltage integrated circuits (HVICs) K1 breakdown voltage (BV) K1 isolation structure K1 high voltage junction termination (HVJT) K1 NLDMOS K1 PLDMOS K1 potential delivering field plates (PDFPs) SP 406 OP 409 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579689 DO https://doi.org/10.1109/ISPSD59661.2024.10579689 SF ELIB - SuUB Bremen
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