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1 Ergebnisse
1
First Demonstration of All-SiC Half-Bridge Gate Driver with..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Ma, Jie
;
Gu, Yong
;
Hou, Xiangyu
... - p. 502-505 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579694
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>First Demonstration of All-SiC Half-Bridge Gate Driver with High-Side Floating Substrate Region</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579694&Exemplar=1&LAN=DE A1 Ma, Jie A1 Gu, Yong A1 Hou, Xiangyu A1 Hong, Jingjing A1 Ye, Ran A1 Li, Sheng A1 Wei, Jiaxing A1 Liu, Ao A1 Huang, Runhua A1 Bai, Song A1 Zhang, Long A1 Liu, Siyang A1 Sun, Weifeng YR 2024 SN 1946-0201 K1 Temperature measurement K1 Resistors K1 Semiconductor device measurement K1 Low voltage K1 High-voltage techniques K1 Gate drivers K1 Semiconductor diodes K1 SiC K1 integrated circuits K1 half-bridge K1 driver K1 high-side K1 low-side K1 high temperature SP 502 OP 505 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579694 DO https://doi.org/10.1109/ISPSD59661.2024.10579694 SF ELIB - SuUB Bremen
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