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1 Ergebnisse
1
Demonstration of Pseudo Independent Driving of Buried Gate ..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Nishiwaki, Tatsuya
;
Kumabe, Yu
;
Miyajima, Naoya
.. - p. 355-358 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579695
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Demonstration of Pseudo Independent Driving of Buried Gate in Trench Field Plate MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579695&Exemplar=1&LAN=DE A1 Nishiwaki, Tatsuya A1 Kumabe, Yu A1 Miyajima, Naoya A1 Kawamura, Keiko A1 Kobayashi, Kenya YR 2024 SN 1946-0201 K1 Performance evaluation K1 MOSFET K1 Switches K1 Logic gates K1 Semiconductor diodes K1 Power semiconductor devices K1 Copper K1 Trench Field Plate MOSFET K1 Gate-connected FP K1 Buried FP gate K1 Gate driving technique K1 Pseudo independent buried FP gate driving SP 355 OP 358 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579695 DO https://doi.org/10.1109/ISPSD59661.2024.10579695 SF ELIB - SuUB Bremen
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